IPB027N10N5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB027N10N5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW5282596
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 120A
Documentation

Datasheet

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IPB027N10N5ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB027N10N5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW5282596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	250 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.5 mΩ
Polarity	N-CH
Power Dissipation	250 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	120A
Rise Time	15 ns
Input Capacitance (Ciss)	10300pF @50V(Vds)
Input Power (Max)	250 W
Fall Time	17 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

IPB027N10N5, SP001227034

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