IPB038N12N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB038N12N3 G
Manufacturer

Infineon
ChipWorker Part#

CW56221550
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

Trans MOSFET N-CH 120V 120A 3Pin(2+Tab) TO-263
Documentation

Datasheet

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IPB038N12N3 G Specifications

Attribute	Attribute Value

Part Number	IPB038N12N3 G
Manufacturer	Infineon
ChipWorker Part#	CW56221550
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0032 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	120 V
Rise Time	52 ns
Input Capacitance (Ciss)	13800pF @60V(Vds)
Input Power (Max)	300 W
Fall Time	21 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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