IPB072N15N3GATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB072N15N3GATMA1
Manufacturer

Infineon
ChipWorker Part#

CW4394663
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 150V 100A
Documentation

Datasheet

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IPB072N15N3GATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB072N15N3GATMA1
Manufacturer	Infineon
ChipWorker Part#	CW4394663
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	300 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0058 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	100A
Rise Time	35 ns
Input Capacitance (Ciss)	5470pF @75V(Vds)
Fall Time	14 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption.
Environment-friendly
High power density
Smallest board-space consumption
Easy-to-design

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