IPB120P04P4L03ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB120P04P4L03ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW8031903
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 40V 120A
Documentation

Datasheet

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IPB120P04P4L03ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB120P04P4L03ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW8031903
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0026 Ω
Polarity	P-Channel
Power Dissipation	136 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	120A
Rise Time	16 ns
Input Capacitance (Ciss)	15000pF @25V(Vds)
Fall Time	57 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	136W (Tc)
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

The IPB120P04P4L-03 is a P-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
Logic level
AEC qualified
MSL1 up to 260°C peak reflow
Green device
100% Avalanche tested
Simple interface drive circuit
World"s lowest RDS (ON) at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Robust packages with superior quality and reliability

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