IPB180N10S402ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB180N10S402ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW10815548
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 100V 180A
Documentation

Datasheet

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IPB180N10S402ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB180N10S402ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW10815548
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	TO-263-7
Number of Channels	1 Channel
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	2.5 MΩ
Polarity	N-CH
Power Dissipation	300 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	9 ns
Input Capacitance (Ciss)	14600pF @25V(Vds)
Fall Time	40 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

* N-channel - Enhancement mode * AEC qualified * MSL1 up to 260°C peak reflow * 175°C operating temperature * Green product (RoHS compliant) * 100% Avalanche tested

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