IPB65R045C7ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB65R045C7ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW12262563
Category

High Voltage MOS Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 46A
Documentation

Datasheet

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IPB65R045C7ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB65R045C7ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW12262563
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	227 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-Channel
Power Dissipation	227 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	46A
Rise Time	14 ns
Input Capacitance (Ciss)	4340pF @400V(Vds)
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	227W (Tc)
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPB65R045C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased dV/dt ruggedness
Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
Best in class RDS (ON)
Easy to use/drive
Halogen-free
Enabling higher system efficiency
Enabling higher frequency
Increased power density solutions
Size savings due to reduced cooling requirements
Higher system reliability due to lower operating temperatures
Reduced energy stored in output capacitance(Eoss)
Low switching losses
Outstanding CoolMOS™ quality
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

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