IPB65R150CFD - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB65R150CFD
Manufacturer

Infineon
ChipWorker Part#

CW133183266
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 22.4A
Documentation

Datasheet

IPB65R150CFD Global Supplier

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IPB65R150CFD Specifications

Attribute	Attribute Value

Part Number	IPB65R150CFD
Manufacturer	Infineon
ChipWorker Part#	CW133183266
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Case/Package	TO-263-3
Polarity	N-CH
Power Dissipation	195.3 W
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	22.4A
Rise Time	7.6 ns
Fall Time	5.6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
650V technology with integrated fast body diode
Limited voltage overshoot during hard commutation
Significant Q g reduction compared to 600V CFD technology
Tighter R DS(ON) max to R DS(on) typ window
Easy to design-in
Lower price compared to 600V CFD technology
Benefits:
Low switching losses due to low Q rr at repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Q oss
Reduced turn on and turn of delay times
Outstanding CoolMOS™ quality
Target Applications:
Telecom
Server
Solar
HID lamp ballast
LED lighting
eMobility

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