IPD220N06L3GBTMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD220N06L3GBTMA1
Manufacturer

Infineon
ChipWorker Part#

CW44464400
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 60V 30A
Documentation

Datasheet

IPD220N06L3GBTMA1 Global Supplier

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IPD220N06L3GBTMA1 Specifications

Attribute	Attribute Value

Part Number	IPD220N06L3GBTMA1
Manufacturer	Infineon
ChipWorker Part#	CW44464400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0178 Ω
Polarity	N-Channel
Power Dissipation	36 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	30A
Rise Time	3 ns
Input Capacitance (Ciss)	1600pF @30V(Vds)
Input Power (Max)	36 W
Fall Time	3 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	36W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD220N06L3GBTMA1 power MOSFET. Its maximum power dissipation is 36000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

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