IPD33CN10NGATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD33CN10NGATMA1
Manufacturer

Infineon
ChipWorker Part#

CW61800023
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 100V 27A 3Pin TO-252
Documentation

Datasheet

IPD33CN10NGATMA1 Global Supplier

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IPD33CN10NGATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD33CN10NGATMA1
Manufacturer	Infineon
ChipWorker Part#	CW61800023
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Dissipation	58 W
Drain to Source Voltage (Vds)	100 V
Rise Time	21 ns
Input Capacitance (Ciss)	1570pF @50V(Vds)
Fall Time	4 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	58W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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