IPD50R520CP - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD50R520CP
Manufacturer

Infineon
ChipWorker Part#

CW108455881
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 500V 7.1A
Documentation

Datasheet

IPD50R520CP Global Supplier

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IPD50R520CP Specifications

Attribute	Attribute Value

Part Number	IPD50R520CP
Manufacturer	Infineon
ChipWorker Part#	CW108455881
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	520 mΩ
Polarity	N-Channel
Power Dissipation	66 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	550 V
Continuous Drain Current (Ids)	7.10 A
Rise Time	14 ns
Input Capacitance (Ciss)	680pF @100V(Vds)
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	66W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPD50R520CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
Lowest figure of merit Ron x Qg
Extreme dV/dt rate
Ultra low RDS (ON), very fast switching
Very low internal Rg
High peak current capability
High power density and efficiency for superior power conversion systems
Best-in-class performance ratio
Qualified according to JEDEC for target applications
Green device

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