IPD600N25N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD600N25N3 G
Manufacturer

Infineon
ChipWorker Part#

CW58479196
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 250V 25A 3Pin TO-252 T/R
Documentation

Datasheet

IPD600N25N3 G Global Supplier

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IPD600N25N3 G Specifications

Attribute	Attribute Value

Part Number	IPD600N25N3 G
Manufacturer	Infineon
ChipWorker Part#	CW58479196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Drain to Source Resistance (on) (Rds)	0.051 Ω
Polarity	N-Channel
Power Dissipation	136 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	250 V
Rise Time	10 ns
Input Capacitance (Ciss)	1770pF @100V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	136 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

Summary of Features:
Industry’s lowest R DS(on)
Lowest Q g and Q gd
World’s lowest FOM RoHS comliant − halogen free MSL 1 rated
Benefits:
Highest efficiency
Highest Power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Enviromentally friendly
Easy-to-design-in products

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