IPD60R380P6ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD60R380P6ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW54150904
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 600V 10.6A
Documentation

Datasheet

IPD60R380P6ATMA1 Global Supplier

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IPD60R380P6ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD60R380P6ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW54150904
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.342 Ω
Polarity	N-CH
Power Dissipation	83 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	10.6A
Rise Time	6 ns
Input Capacitance (Ciss)	877pF @100V(Vds)
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83W (Tc)
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Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

Summary of Features:
Reduced gate charge (Q g)
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology
Benefits:
Improved effciency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behavior
High robustness and better efficiency
Outstanding quality & reliability

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