IPD65R190C7ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD65R190C7ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW14611946
Category

High Voltage MOS Transistor
Package

TO-252-3
Description

DPAK N-CH 650V 13A
Documentation

Datasheet

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IPD65R190C7ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD65R190C7ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW14611946
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	28 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.168 Ω
Polarity	N-Channel
Power Dissipation	72 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	13A
Rise Time	11 ns
Input Capacitance (Ciss)	1150pF @400V(Vds)
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	72W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world"s lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Reduced energy stored in output capacitance (Eoss)
Lower gate charge
Space-saving through reduction of parts
Improved safety margin
Lowest conduction losses
Low switching losses
Better light load efficiency
Increasing power density

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