IPD70R900P7SAUMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD70R900P7SAUMA1
Manufacturer

Infineon
ChipWorker Part#

CW5835233
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 700V 6A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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IPD70R900P7SAUMA1 Specifications

Attribute	Attribute Value

Part Number	IPD70R900P7SAUMA1
Manufacturer	Infineon
ChipWorker Part#	CW5835233
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.74 Ω
Power Dissipation	30.5 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	700 V
Rise Time	4.7 ns
Input Capacitance (Ciss)	211pF @400V(Vds)
Fall Time	31 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	30.5W (Tc)
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

Description:
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Efficiency and thermals
Ease-of-use
EMI behavior
Summary of Features:
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Benefits:
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product

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