IPD80R1K0CEATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD80R1K0CEATMA1
Manufacturer

Infineon
ChipWorker Part#

CW10968800
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 800V 5.7A
Documentation

Datasheet

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IPD80R1K0CEATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD80R1K0CEATMA1
Manufacturer	Infineon
ChipWorker Part#	CW10968800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	83 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.8 Ω
Polarity	N-Channel
Power Dissipation	83 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	5.7A
Rise Time	15 ns
Input Capacitance (Ciss)	785pF @100V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Summary of Features:
Low specific on-state resistance (R DS(on)*A)
Very low energy storage in output capacitance (E oss) @ 400V
Low gate charge (Q g)
Field-proven CoolMOS™ quality
CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits:
High efficiency and power density
Outstanding price/performance
High reliability
Ease-of-use
Target Applications:
LED lighting

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