IPG20N04S4L08ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPG20N04S4L08ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW7818004
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8-4
Description

TDSON N-CH 40V 20A
Documentation

Datasheet

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IPG20N04S4L08ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPG20N04S4L08ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW7818004
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8-4
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0072 Ω
Polarity	Dual N-Channel
Power Dissipation	54 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	20A
Rise Time	3 ns
Input Capacitance (Ciss)	2350pF @25V(Vds)
Input Power (Max)	54 W
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	54000 mW
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Size-Length	5.15 mm
Size-Width	6.15 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPG20N04S4L-08 is an OptiMOS™-T2 dual N-channel enhancement-mode Power Transistor for small loads control switching and body applications.
Logic level
Green device
100% Avalanche tested
Larger source lead-frame connection for wire bonding
Same thermal and electrical performance as a DPAK with the same die size
Exposed pad provides excellent thermal transfer (varies by die size)

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