IPG20N10S4L22ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPG20N10S4L22ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW53462700
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8-4
Description

TDSON N-CH 100V 20A
Documentation

Datasheet

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IPG20N10S4L22ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPG20N10S4L22ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW53462700
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8-4
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.02 Ω
Polarity	N-CH
Power Dissipation	60 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	20A
Rise Time	3 ns
Input Capacitance (Ciss)	1755pF @25V(Vds)
Input Power (Max)	60 W
Fall Time	18 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60 W
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Benefits:
Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
Bond wire is 200um for up to 20A current
Larger source lead frame connection for wire bonding
Package: PG-TDSON-8-4
Same thermal and electrical performance as a DPAK with the same die size.
Exposed pad provides excellent thermal transfer (varies by die size)
Two N-Channel MOSFETs in one package with 2 isolated leadframes

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