IPP65R110CFD - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPP65R110CFD
Manufacturer

Infineon
ChipWorker Part#

CW48798969
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 700V 31.2A
Documentation

Datasheet

IPP65R110CFD Global Supplier

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IPP65R110CFD Specifications

Attribute	Attribute Value

Part Number	IPP65R110CFD
Manufacturer	Infineon
ChipWorker Part#	CW48798969
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	110 mΩ
Polarity	N-CH
Power Dissipation	277.8 W
Drain to Source Voltage (Vds)	700 V
Breakdown Voltage (Drain to Source)	650 V
Continuous Drain Current (Ids)	31.2A
Rise Time	11 ns
Input Capacitance (Ciss)	3240pF @100V(Vds)
Fall Time	6 nS
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	277.8 W
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
650V technology with integrated fast body diode
Limited voltage overshoot during hard commutation
Significant Q g reduction compared to 600V CFD technology
Tighter R DS(ON) max to R DS(on) typ window
Easy to design-in
Lower price compared to 600V CFD technology
Benefits:
Low switching losses due to low Q rr at repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Q oss
Reduced turn on and turn of delay times
Outstanding CoolMOS™ quality
Target Applications:
Telecom
Server
Solar
HID lamp ballast
LED lighting
eMobility

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