IPP65R190C7FKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPP65R190C7FKSA1
Manufacturer

Infineon
ChipWorker Part#

CW12862936
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220 N-CH 650V 13A
Documentation

Datasheet

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IPP65R190C7FKSA1 Specifications

Attribute	Attribute Value

Part Number	IPP65R190C7FKSA1
Manufacturer	Infineon
ChipWorker Part#	CW12862936
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	72 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.168 Ω
Polarity	N-Channel
Power Dissipation	72 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	13A
Rise Time	11 ns
Input Capacitance (Ciss)	1150pF @400V(Vds)
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	72W (Tc)
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Size-Length	10.36 mm
Size-Width	15.95 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Revolutionary best-in-class RDS (ON)
Reduced energy stored in output capacitance (EOSS)
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality

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