IPT020N10N3ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPT020N10N3ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW9609437
Category

MOSFET, MOSFET Transistor
Package

PG-HSOF-8-1
Description

HSOF N-CH 100V 300A
Documentation

Datasheet

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IPT020N10N3ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPT020N10N3ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW9609437
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-HSOF-8-1
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0017 Ω
Polarity	N-Channel
Power Dissipation	375 W
Threshold Voltage	2.7 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	300A
Rise Time	58 ns
Input Capacitance (Ciss)	11200pF @50V(Vds)
Input Power (Max)	375 W
Fall Time	18 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	10.58 mm
Size-Width	10.1 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Industry"s lowest R DS(on)
Highest current capability up to 300A
Very low package parasitic and inductances
Less paralleling and cooling required
Highest system reliability
Enabling very compact design
Normal level
Excellent gate charge x RDS (ON) product (FOM)
Extremely low ON-resistance RDS (ON)
High current capability
Qualified according to JEDEC for target application
Halogen-free, Green device

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