IPW65R080CFDFKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPW65R080CFDFKSA1
Manufacturer

Infineon
ChipWorker Part#

CW11559559
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

TO-247 N-CH 650V 43.3A
Documentation

Datasheet

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IPW65R080CFDFKSA1 Specifications

Attribute	Attribute Value

Part Number	IPW65R080CFDFKSA1
Manufacturer	Infineon
ChipWorker Part#	CW11559559
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	391 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.072 Ω
Polarity	N-Channel
Power Dissipation	391 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	700 V
Continuous Drain Current (Ids)	43.3A
Rise Time	18 ns
Input Capacitance (Ciss)	5030pF @100V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	391000 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Limited voltage overshoot during hard commutation
Easy to design in
Low switching losses due to low Qrr at repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Qoss
Reduced turn on and turn off delay times

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