IPW90R120C3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPW90R120C3
Manufacturer

Infineon
ChipWorker Part#

CW7779748
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 900V 36A
Documentation

Datasheet

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IPW90R120C3 Specifications

Attribute	Attribute Value

Part Number	IPW90R120C3
Manufacturer	Infineon
ChipWorker Part#	CW7779748
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-Channel
Power Dissipation	417 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	900 V
Continuous Drain Current (Ids)	36.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	6800pF @100V(Vds)
Input Power (Max)	417 W
Fall Time	24 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	417W (Tc)
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The IPW90R120C3 is a 600V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Very low energy storage in output capacitance (Eoss) at 400V
Low gate charge (Qg)
High efficiency and power density
Outstanding performance
High reliability
Easy to use

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