IR2110SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2110SPBF
Manufacturer

Infineon
ChipWorker Part#

CW3241661
Category

FET Driver
Package

SOIC-16
Description

MOSFET DRVR 500V 2.5A 2Out Hi/Lo Side Non-Inv 16Pin SOIC W
Documentation

Datasheet

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IR2110SPBF Specifications

Attribute	Attribute Value

Part Number	IR2110SPBF
Manufacturer	Infineon
ChipWorker Part#	CW3241661
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	10.0V (min)
Operating Voltage	10V ~ 20V
Power Rating	1.25 W
Rise/Fall Time	25ns, 17ns
Number of Outputs	2 Output
Output Voltage	500 V
Output Current	2.5 A
Number of Channels	2 Channel
Number of Positions	16 Position
Power Dissipation	1250 mW
Quiescent Current	180 µA
Rise Time	25 ns
Fall Time	17 ns
Fall Time (Max)	25 ns
Fall Time (Max)	35 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1250 mW
Supply Voltage	3.3V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	10.5 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2110SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Cycle-by-cycle edge-triggered shutdown logic
Matched propagation delay for both channels

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