IR2111PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2111PBF
Manufacturer

Infineon
ChipWorker Part#

CW2758888
Category

FET Driver
Package

PDIP-8
Description

MOSFET DRVR 600V 0.5A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP
Documentation

Datasheet

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IR2111PBF Specifications

Attribute	Attribute Value

Part Number	IR2111PBF
Manufacturer	Infineon
ChipWorker Part#	CW2758888
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	PDIP-8
Operating Voltage	10V ~ 20V
Power Rating	1 W
Rise/Fall Time	80ns, 40ns
Number of Outputs	2 Output
Output Voltage	600 V
Output Current	250.500 mA
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	1000 mW
Quiescent Current	70 µA
Rise Time	80 ns
Fall Time	40 ns
Fall Time (Max)	65 ns
Fall Time (Max)	130 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	10.92 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2111PBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set dead-time
High side output in phase with input

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