IR2125PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2125PBF
Manufacturer

Infineon
ChipWorker Part#

CW2372326
Category

FET Driver
Package

PDIP-8
Description

MOSFET DRVR 500V 3.3A 1Out Hi/Lo Side Non-Inv 8Pin PDIP
Documentation

Datasheet

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IR2125PBF Specifications

Attribute	Attribute Value

Part Number	IR2125PBF
Manufacturer	Infineon
ChipWorker Part#	CW2372326
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	PDIP-8
Supply Voltage (DC)	0.00V(min), 18.0V(max)
Operating Voltage	0V ~ 18V
Power Rating	1 W
Rise/Fall Time	43ns, 26ns
Number of Outputs	1 Output
Output Voltage	518 V
Output Current	1.6 A
Number of Channels	1 Channel
Number of Positions	8 Position
Power Dissipation	1000 mW
Quiescent Current	700 µA
Rise Time	43 ns
Fall Time	26 ns
Fall Time (Max)	35 ns
Fall Time (Max)	60 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	0V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	0 V
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Size-Length	10.92 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout
Current detection and limiting loop to limit driven power transistor current
Error lead indicates fault conditions and programs shutdown time
Output in phase with input

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