IR2130SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2130SPBF
Manufacturer

Infineon
ChipWorker Part#

CW3839903
Category

FET Driver
Package

SOIC-28
Description

Driver 600V 0.5A 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W
Documentation

Datasheet

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IR2130SPBF Specifications

Attribute	Attribute Value

Part Number	IR2130SPBF
Manufacturer	Infineon
ChipWorker Part#	CW3839903
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	28 Pin
Case/Package	SOIC-28
Supply Voltage (DC)	10.0V (min)
Power Rating	1.6 W
Rise/Fall Time	80ns, 35ns
Number of Outputs	6 Output
Output Voltage	620 V
Output Current	250 mA
Number of Channels	6 Channel
Number of Positions	28 Position
Power Dissipation	1.6 W
Rise Time	80 ns
Fall Time	35 ns
Fall Time (Max)	55 ns
Fall Time (Max)	125 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	18.1 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2130SPBF is a high voltage/high speed power MOSFET and IGBT Driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or under-voltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage
dV/dt Immune
Gate drive supply range from 10 to 20V
Under-voltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent half-bridge drivers
Matched propagation delay for all channels
Outputs out of phase with inputs
Cross-conduction prevention logic
Fully operational to +600V
2.5V Logic compatible

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