IR2133SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2133SPBF
Manufacturer

Infineon
ChipWorker Part#

CW5630136
Category

FET Driver
Package

SOIC-28
Description

MOSFET DRVR 600V 0.5A 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W Tube
Documentation

Datasheet

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IR2133SPBF Specifications

Attribute	Attribute Value

Part Number	IR2133SPBF
Manufacturer	Infineon
ChipWorker Part#	CW5630136
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	28 Pin
Case/Package	SOIC-28
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	90ns, 40ns
Number of Outputs	6 Output
Output Voltage	0.3 V
Output Current	200 mA
Number of Positions	28 Position
Power Dissipation	1600 mW
Quiescent Current	4 mA
Rise Time	90 ns
Fall Time	40 ns
Fall Time (Max)	70 ns
Fall Time (Max)	150 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	18.1 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IR2133SPBF is a high voltage high speed power MOSFET and IGBT Bridge Driver with three independent high-side and low-side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analogue feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also be derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or under-voltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration which operates up to 600 or 1200V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for all channels
Overcurrent shutdown turns OFF all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
2.5V Logic compatible
Outputs out of phase with inputs

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