IR21531DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR21531DPBF
Manufacturer

Infineon
ChipWorker Part#

CW6136472
Category

FET Driver
Package

DIP-8
Description

Self-Oscillating 600V Half Bridge Driver IC with typical 0.18A source and 0.26A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs.
Documentation

Datasheet

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IR21531DPBF Specifications

Attribute	Attribute Value

Part Number	IR21531DPBF
Manufacturer	Infineon
ChipWorker Part#	CW6136472
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Supply Voltage (DC)	10.0V (min)
Operating Voltage	10V ~ 16.8V
Rise/Fall Time	80ns, 45ns
Number of Outputs	2 Output
Number of Positions	8 Position
Power Dissipation	1000 mW
Rise Time	150ns (Max)
Fall Time	100ns (Max)
Fall Time (Max)	100 ns
Fall Time (Max)	150 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	10V ~ 15.6V
Supply Voltage (Max)	16.8 V
Supply Voltage (Min)	10 V
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Size-Length	10.92 mm
Size-Width	7.11 mm
Operating Temperature	-40℃ ~ 125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR21531DPBF is a self-oscillating Half-bridge Gate Driver IC incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IC provides more functionality and is easier to use. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition the gate driver output pulse widths are the same once the rising under-voltage lockout threshold on VCC has been improved significantly, both by lowering the peak DI/DT of the gate driver and by increasing the under-voltage lockout hysteresis to 1V.
True micro power start-up
Tighter initial dead-time control
Low temperature coefficient dead time
Shutdown features on CT pin
Lower power level-shifting circuit
Constant LO, HO pulse widths at start-up
Low side output in phase with RT
Excellent latch immunity on all inputs and outputs
Finally special attention has been paid to maximizing the latch immunity of the device and providing comprehensive ESD protection all pins.

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