IR2181SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2181SPBF
Manufacturer

Infineon
ChipWorker Part#

CW9569021
Category

FET Driver
RoHS

Lead free / RoHS Compliant
Description

600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .
Documentation

Datasheet

IR2181SPBF Global Supplier

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IR2181SPBF Specifications

Attribute	Attribute Value

Part Number	IR2181SPBF
Manufacturer	Infineon
ChipWorker Part#	CW9569021
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	625 mW
Rise/Fall Time	40ns, 20ns
Number of Outputs	2 Output
Output Voltage	10.20 V
Output Current	1.4.2.3 A
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	625 mW
Quiescent Current	240 mA
Rise Time	60 ns
Fall Time	35 ns
Fall Time (Max)	35 ns
Fall Time (Max)	60 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2181SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
Matched propagation delay for both channels
Lower DI/DT gate driver for better noise immunity
Logic and power ground ±5V offset

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