IR2233JPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2233JPBF
Manufacturer

Infineon
ChipWorker Part#

CW10567463
Category

FET Driver
Package

PLCC-44
Description

MOSFET DRVR 1.2kV 0.5A 6Out Hi/Lo Side 3-Phase Brdg Inv 32Pin PLCC Tube
Documentation

Datasheet

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IR2233JPBF Specifications

Attribute	Attribute Value

Part Number	IR2233JPBF
Manufacturer	Infineon
ChipWorker Part#	CW10567463
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	44 Pin
Case/Package	PLCC-44
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	90ns, 40ns
Number of Outputs	6 Output
Output Voltage	0.3 V
Output Current	200 mA
Number of Positions	44 Position
Power Dissipation	2 W
Rise Time	150 ns
Fall Time	70 ns
Fall Time (Max)	70 ns
Fall Time (Max)	150 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2000 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	16.66 mm
Size-Width	16.66 mm
Size-Height	3.69 mm
Operating Temperature	125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2017/01/12
ECCN Code	EAR99

Product Description

The IR2233JPBF is a high voltage high speed power MOSFET and IGBT Bridge Driver with three independent high-side and low-side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analogue feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also be derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or under-voltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration which operates up to 600 or 1200V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for all channels
Overcurrent shutdown turns OFF all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
2.5V Logic compatible
Outputs out of phase with inputs

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