IRF1010NSPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF1010NSPBF
Manufacturer

Infineon
ChipWorker Part#

CW7674453
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 55V 85A
Documentation

Datasheet

IRF1010NSPBF Global Supplier

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IRF1010NSPBF Specifications

Attribute	Attribute Value

Part Number	IRF1010NSPBF
Manufacturer	Infineon
ChipWorker Part#	CW7674453
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	3.8 W
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	11 mΩ
Polarity	N-Channel
Power Dissipation	180 W
Threshold Voltage	2V ~ 4V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	85A
Rise Time	76 ns
Input Capacitance (Ciss)	3210pF @25V(Vds)
Input Power (Max)	180 W
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Benefits:
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature

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