IRF1018EPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF1018EPBF
Manufacturer

Infineon
ChipWorker Part#

CW6102484
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 79A
Documentation

Datasheet

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IRF1018EPBF Specifications

Attribute	Attribute Value

Part Number	IRF1018EPBF
Manufacturer	Infineon
ChipWorker Part#	CW6102484
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	110 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0071 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	79A
Rise Time	35 ns
Input Capacitance (Ciss)	2290pF @50V(Vds)
Input Power (Max)	110 W
Fall Time	46 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRF1018EPBF is a 60V single N-channel HEXFET® Power MOSFET with high speed power switching and enhanced body diode dV/dt and dI/dt capability.
High efficiency synchronous rectification in SMPS
High frequency hard switching converter
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA

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