IRF1018ESPBF - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIRF1018ESPBF
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ManufacturerInfineon
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ChipWorker Part#CW12616460
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionD2PAK N-CH 60V 79A
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DocumentationDatasheet
Payment Methods and Delivery
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IRF1018ESPBF Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IRF1018ESPBF |
| Manufacturer | Infineon |
| ChipWorker Part# | CW12616460 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 110 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0071 Ω |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 79A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 2290pF @50V(Vds) |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| expand all | |
| Size-Length | 10.67 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
Product Description
- The IRF1018ESPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Delivery
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Ordering Information
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