IRF1310NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF1310NPBF
Manufacturer

Infineon
ChipWorker Part#

CW6385666
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 42A
Documentation

Datasheet

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IRF1310NPBF Specifications

Attribute	Attribute Value

Part Number	IRF1310NPBF
Manufacturer	Infineon
ChipWorker Part#	CW6385666
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	160 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.036 Ω
Polarity	N-Channel
Power Dissipation	170 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	42A
Rise Time	56 ns
Input Capacitance (Ciss)	1900pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	40 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF1310NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Dynamic dV/dt rating
Fully avalanche rated

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