IRF135B203 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF135B203
Manufacturer

Infineon
ChipWorker Part#

CW41128596
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CH 135V 129A
Documentation

Datasheet

IRF135B203 Global Supplier

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IRF135B203 Specifications

Attribute	Attribute Value

Part Number	IRF135B203
Manufacturer	Infineon
ChipWorker Part#	CW41128596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0067 Ω
Polarity	N-CH
Power Dissipation	441 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	135 V
Continuous Drain Current (Ids)	129A
Rise Time	73 ns
Input Capacitance (Ciss)	9700pF @50V(Vds)
Fall Time	81 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	441W (Tc)
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Size-Width	4.4 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Benefits:
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free

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