IRF200P222 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF200P222
Manufacturer

Infineon
ChipWorker Part#

CW21108107
Package

TO-247-3
Description

Trans MOSFET N-CH 200V 182A Tube
Documentation

Datasheet

IRF200P222 Global Supplier

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IRF200P222 Specifications

Attribute	Attribute Value

Part Number	IRF200P222
Manufacturer	Infineon
ChipWorker Part#	CW21108107
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0053 Ω
Power Dissipation	556 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Rise Time	96 ns
Input Capacitance (Ciss)	9820pF @50V(Vds)
Fall Time	97 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	556000 mW
	expand all
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Benefits:
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
Target Applications:
UPS and Inverter applications
Half-bridge and full-bridge topologies
Resonant mode power supplies
DC/DC and AC/DC converters
OR-ing and redundant power switches
Brushed and BLDC Motor drive applications
Battery powered circuits

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Ordering Information

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- Please check the technical specifications of the products when ordering.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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