IRF2807SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF2807SPBF
Manufacturer

Infineon
ChipWorker Part#

CW10860457
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 75V 82A
Documentation

Datasheet

IRF2807SPBF Global Supplier

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IRF2807SPBF Specifications

Attribute	Attribute Value

Part Number	IRF2807SPBF
Manufacturer	Infineon
ChipWorker Part#	CW10860457
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.013 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	75 V
Continuous Drain Current (Ids)	82A
Rise Time	64 ns
Input Capacitance (Ciss)	3820pF @25V(Vds)
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	230W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF2807SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating

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