IRF3205SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF3205SPBF
Manufacturer

Infineon
ChipWorker Part#

CW8155430
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 55V 110A
Documentation

Datasheet

IRF3205SPBF Global Supplier

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IRF3205SPBF Specifications

Attribute	Attribute Value

Part Number	IRF3205SPBF
Manufacturer	Infineon
ChipWorker Part#	CW8155430
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.008 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	4 V
Input Capacitance	3247pF @25V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	110A
Rise Time	101 ns
Input Capacitance (Ciss)	3247pF @25V(Vds)
Input Power (Max)	200 W
Fall Time	65 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF3205SPBF is a 55V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
Fully avalanche rated
175°C Operating temperature

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