IRF3703PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF3703PBF
Manufacturer

Infineon
ChipWorker Part#

CW12134129
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 30V 210A
Documentation

Datasheet

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IRF3703PBF Specifications

Attribute	Attribute Value

Part Number	IRF3703PBF
Manufacturer	Infineon
ChipWorker Part#	CW12134129
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	230 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0028 Ω
Polarity	N-Channel
Power Dissipation	230 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	210A
Rise Time	123 ns
Input Capacitance (Ciss)	8250pF @25V(Vds)
Input Power (Max)	3.8 W
Fall Time	24 ns
Operating Temperature (Max)	175 ℃
Power Dissipation (Max)	3.8W (Ta), 230W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF3703PBF is a HEXFET® N-channel Power MOSFET offers low gate impedance to reduce switching losses. It is suitable for synchronous rectification and active O-ring.
Ultra-low ON-resistance
Fully avalanche rating

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