IRF3710SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF3710SPBF
Manufacturer

Infineon
ChipWorker Part#

CW10567882
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 57A
Documentation

Datasheet

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IRF3710SPBF Specifications

Attribute	Attribute Value

Part Number	IRF3710SPBF
Manufacturer	Infineon
ChipWorker Part#	CW10567882
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	57A
Rise Time	58 ns
Input Capacitance (Ciss)	3130pF @25V(Vds)
Fall Time	47 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF3710SPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in D2-PAK package. This MOSFET features extremely low on resistance per silicon area, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 23mohm at Vgs of 10V
Power dissipation Pd of 200W at 25°C
Continuous drain current Id of 57A at Vgs 10V and 25°C
Junction temperature range from -55°C to 175°C

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