IRF5210LPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5210LPBF
Manufacturer

Infineon
ChipWorker Part#

CW6158126
Category

MOSFET, MOSFET Transistor
Package

TO-262-3
Description

TO-262P-CH 100V 38A
Documentation

Datasheet

IRF5210LPBF Global Supplier

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IRF5210LPBF Specifications

Attribute	Attribute Value

Part Number	IRF5210LPBF
Manufacturer	Infineon
ChipWorker Part#	CW6158126
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-262-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	P-Channel
Power Dissipation	200 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	38A
Rise Time	63 ns
Input Capacitance (Ciss)	2780pF @25V(Vds)
Input Power (Max)	3.1 W
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	10.54 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF5210LPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Advanced process technology
Ultra-low ON-resistance
Fast switching
Repetitive avalanche allowed up to Tjmax

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