IRF5210STRRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5210STRRPBF
Manufacturer

Infineon
ChipWorker Part#

CW11527819
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 100V 38A
Documentation

Datasheet

IRF5210STRRPBF Global Supplier

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IRF5210STRRPBF Specifications

Attribute	Attribute Value

Part Number	IRF5210STRRPBF
Manufacturer	Infineon
ChipWorker Part#	CW11527819
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	TO-263-3
Power Rating	3.8 W
Number of Channels	1 Channel
Polarity	P-Channel
Power Dissipation	3.1 W
Threshold Voltage	4 V
Input Capacitance	2780 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	38A
Rise Time	63 ns
Input Capacitance (Ciss)	2780pF @25V(Vds)
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Benefits:
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature
P-Channel MOSFET

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