IRF5305PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5305PBF
Manufacturer

Infineon
ChipWorker Part#

CW4426389
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 55V 31A
Documentation

Datasheet

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IRF5305PBF Specifications

Attribute	Attribute Value

Part Number	IRF5305PBF
Manufacturer	Infineon
ChipWorker Part#	CW4426389
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	110 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	P-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Input Capacitance	1200 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	31A
Rise Time	66 ns
Input Capacitance (Ciss)	1200pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	63 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF5305PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is -55V
Gate to source voltage is ±20V
On resistance Rds(on) of 60mohm at Vgs of -10V
Power dissipation Pd of 110W at 25°C
Continuous drain current Id of -31A at Vgs -10V and 25°C
Junction temperature range from -55°C to 175°C

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