IRF540ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF540ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW2491291
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 36A
Documentation

Datasheet

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IRF540ZPBF Specifications

Attribute	Attribute Value

Part Number	IRF540ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW2491291
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	92 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0265 Ω
Polarity	N-CH
Power Dissipation	92 W
Threshold Voltage	4 V
Input Capacitance	1770pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	36A
Rise Time	51 ns
Thermal Resistance	1.64℃/W (RθJC)
Maximum Forward Voltage (Max)	1.3 V
Input Capacitance (Ciss)	1770pF @25V(Vds)
Input Power (Max)	92 W
Fall Time	39 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	92W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
Advanced process technology
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
175°C Operating temperature

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