IRF5801TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5801TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW10574353
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

TSOP N-CH 200V 0.6A
Documentation

Datasheet

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IRF5801TRPBF Specifications

Attribute	Attribute Value

Part Number	IRF5801TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW10574353
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Power Rating	2 W
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	2.2 Ω
Polarity	N-Channel
Power Dissipation	2 W
Threshold Voltage	5.5 V
Input Capacitance	88 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	0.6A
Rise Time	8 ns
Input Capacitance (Ciss)	88pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	3 mm
Size-Width	1.5 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF5801TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
Fully characterized avalanche voltage and current
Fully characterized capacitance including effective COSS to simplify design
Halogen-free

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