IRF630 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF630
Manufacturer

ST Microelectronics
ChipWorker Part#

CW241140
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
Documentation

Datasheet

IRF630 Global Supplier

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IRF630 Specifications

Attribute	Attribute Value

Part Number	IRF630
Manufacturer	ST Microelectronics
ChipWorker Part#	CW241140
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	200 V
Current Rating	9.00 A
Power Rating	75 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.4 Ω
Polarity	N-Channel
Power Dissipation	75 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	15 ns
Input Capacitance (Ciss)	700pF @25V(Vds)
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company"s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
Drain to source voltage (Vds) is 200V
Gate to source voltage of ±20V
Continuous drain current (Id) is 9A
Power dissipation (Pd) is 75W
Operating junction temperature range from -65°C to 150°C
Gate threshold voltage of 3V
Low on state resistance of 350mohm at Vgs 10V

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