IRF630NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF630NPBF
Manufacturer

Infineon
ChipWorker Part#

CW2257883
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 200V 9.3A
Documentation

Datasheet

IRF630NPBF Global Supplier

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IRF630NPBF Specifications

Attribute	Attribute Value

Part Number	IRF630NPBF
Manufacturer	Infineon
ChipWorker Part#	CW2257883
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	82 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Polarity	N-Channel
Power Dissipation	82 W
Threshold Voltage	4 V
Input Capacitance	575 pF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	9.3A
Rise Time	14 ns
Thermal Resistance	1.83℃/W (RθJC)
Input Capacitance (Ciss)	575pF @25V(Vds)
Input Power (Max)	82 W
Fall Time	15 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	82W (Tc)
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Size-Length	10.67 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Fully avalanche rated
Dynamic dV/dt rating
Easy to parallel
Simple drive requirement

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