IRF640NSPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF640NSPBF
Manufacturer

Infineon
ChipWorker Part#

CW10806804
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 200V 18A
Documentation

Datasheet

IRF640NSPBF Global Supplier

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IRF640NSPBF Specifications

Attribute	Attribute Value

Part Number	IRF640NSPBF
Manufacturer	Infineon
ChipWorker Part#	CW10806804
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	150 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.15 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	18A
Rise Time	19 ns
Input Capacitance (Ciss)	1160pF @25V(Vds)
Fall Time	5.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Fully avalanche rated
Dynamic dV/dt rating
Easy to parallel
Simple drive requirement

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