IRF640NSTRLPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF640NSTRLPBF
Manufacturer

Infineon
ChipWorker Part#

CW1467400
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 200V 18A
Documentation

Datasheet

IRF640NSTRLPBF Global Supplier

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IRF640NSTRLPBF Specifications

Attribute	Attribute Value

Part Number	IRF640NSTRLPBF
Manufacturer	Infineon
ChipWorker Part#	CW1467400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	150 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.15 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Input Capacitance	1160 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	18A
Rise Time	19 ns
Input Capacitance (Ciss)	1160pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	5.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF640NSTRLPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Ease of paralleling
Simple drive requirements

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