IRF7201PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7201PBF
Manufacturer

Infineon
ChipWorker Part#

CW6018230
Category

MOSFET, MOSFET Transistor
Package

SO-8
Description

SOIC N-CH 30V 7.3A
Documentation

Datasheet

IRF7201PBF Global Supplier

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IRF7201PBF Specifications

Attribute	Attribute Value

Part Number	IRF7201PBF
Manufacturer	Infineon
ChipWorker Part#	CW6018230
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SO-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.03 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1 V
Input Capacitance	550pF @25V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	7.3A
Rise Time	35 ns
Input Capacitance (Ciss)	550pF @25V(Vds)
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Tc)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7201PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Generation V technology
Dynamic dV/dt rating
Fast switching
Low static drain-to-source ON-resistance
Fully avalanche rating

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